Unsaturated Regime as Alternative Method to Provide Stability of Low-Noise Amplifier on High-Electron-Mobility Transistors
The new method to provide the stability of lownoise HEMT-based amplifiers is proposed. The method is based on a purposeful choice of the DC regime in the unsaturated (ohmic) zone of voltagecurrent characteristic. Stability, first of all that outof- band, rises without degradation of noise characteri...
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| Datum: | 2012 |
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| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | rus |
| Veröffentlicht: |
Видавничий дім «Академперіодика»
2012
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| Online Zugang: | http://rpra-journal.org.ua/index.php/ra/article/view/427 |
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| Назва журналу: | Radio physics and radio astronomy |
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Radio physics and radio astronomy| Zusammenfassung: | The new method to provide the stability of lownoise HEMT-based amplifiers is proposed. The method is based on a purposeful choice of the DC regime in the unsaturated (ohmic) zone of voltagecurrent characteristic. Stability, first of all that outof- band, rises without degradation of noise characteristic. In support of the offered method efficiency, the results of examination of amplifiers on different transistors are brought. |
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