Bunak, S. V., Buyanin, A. A., Ilchenko, V. V., Marin, V. V., Melnik, V. P., Khacevich, I. M., . . . Shkavro, A. G. (2010). Electrical properties of semiconductor structures with Si nanoclusters in SiO2 grown by high temperature annealing technology of SiOX layer, X<2.
Chicago-Zitierstil (17. Ausg.)Bunak, S. V., A. A. Buyanin, V. V. Ilchenko, V. V. Marin, V. P. Melnik, I. M. Khacevich, O. V. Tretyak, und A. G. Shkavro. Electrical Properties of Semiconductor Structures with Si Nanoclusters in SiO2 Grown by High Temperature Annealing Technology of SiOX Layer, X<2. 2010.
MLA-Zitierstil (8. Ausg.)Bunak, S. V., et al. Electrical Properties of Semiconductor Structures with Si Nanoclusters in SiO2 Grown by High Temperature Annealing Technology of SiOX Layer, X<2. 2010.