APA (7th ed.) Citation

Bunak, S. V., Buyanin, A. A., Ilchenko, V. V., Marin, V. V., Melnik, V. P., Khacevich, I. M., . . . Shkavro, A. G. (2010). Electrical properties of semiconductor structures with Si nanoclusters in SiO2 grown by high temperature annealing technology of SiOX layer, X<2.

Chicago Style (17th ed.) Citation

Bunak, S. V., A. A. Buyanin, V. V. Ilchenko, V. V. Marin, V. P. Melnik, I. M. Khacevich, O. V. Tretyak, and A. G. Shkavro. Electrical Properties of Semiconductor Structures with Si Nanoclusters in SiO2 Grown by High Temperature Annealing Technology of SiOX Layer, X<2. 2010.

MLA (8th ed.) Citation

Bunak, S. V., et al. Electrical Properties of Semiconductor Structures with Si Nanoclusters in SiO2 Grown by High Temperature Annealing Technology of SiOX Layer, X<2. 2010.