Bunak, S. V., Buyanin, A. A., Ilchenko, V. V., Marin, V. V., Melnik, V. P., Khacevich, I. M., . . . Shkavro, A. G. (2010). Electrical properties of semiconductor structures with Si nanoclusters in SiO2 grown by high temperature annealing technology of SiOX layer, X<2.
Чикаго стиль цитування (17-те видання)Bunak, S. V., A. A. Buyanin, V. V. Ilchenko, V. V. Marin, V. P. Melnik, I. M. Khacevich, O. V. Tretyak, та A. G. Shkavro. Electrical Properties of Semiconductor Structures with Si Nanoclusters in SiO2 Grown by High Temperature Annealing Technology of SiOX Layer, X<2. 2010.
Стиль цитування MLA (8-ме видання)Bunak, S. V., et al. Electrical Properties of Semiconductor Structures with Si Nanoclusters in SiO2 Grown by High Temperature Annealing Technology of SiOX Layer, X<2. 2010.