Electrical properties of semiconductor structures with Si nanoclusters in SiO2 grown by high temperature annealing technology of SiOX layer, X<2
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| Дата: | 2010 |
|---|---|
| Автори: | , , , , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
2010
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| Назва видання: | Semiconductor Physics, Quantum Electronics and Optoelectronics |
| Онлайн доступ: | http://jnas.nbuv.gov.ua/article/UJRN-0000349118 |
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| Назва журналу: | Library portal of National Academy of Sciences of Ukraine | LibNAS |
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Library portal of National Academy of Sciences of Ukraine | LibNAS| id |
open-sciencenbuvgovua-100040 |
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open-sciencenbuvgovua-1000402024-04-17T17:54:38Z Electrical properties of semiconductor structures with Si nanoclusters in SiO2 grown by high temperature annealing technology of SiOX layer, X<2 S. V. Bunak A. A. Buyanin V. V. Ilchenko V. V. Marin V. P. Melnik I. M. Khacevich O. V. Tretyak A. G. Shkavro 1560-8034 2010 en Semiconductor Physics, Quantum Electronics and Optoelectronics http://jnas.nbuv.gov.ua/article/UJRN-0000349118 Article |
| institution |
Library portal of National Academy of Sciences of Ukraine | LibNAS |
| collection |
Open-Science |
| language |
English |
| series |
Semiconductor Physics, Quantum Electronics and Optoelectronics |
| spellingShingle |
Semiconductor Physics, Quantum Electronics and Optoelectronics S. V. Bunak A. A. Buyanin V. V. Ilchenko V. V. Marin V. P. Melnik I. M. Khacevich O. V. Tretyak A. G. Shkavro Electrical properties of semiconductor structures with Si nanoclusters in SiO2 grown by high temperature annealing technology of SiOX layer, X<2 |
| format |
Article |
| author |
S. V. Bunak A. A. Buyanin V. V. Ilchenko V. V. Marin V. P. Melnik I. M. Khacevich O. V. Tretyak A. G. Shkavro |
| author_facet |
S. V. Bunak A. A. Buyanin V. V. Ilchenko V. V. Marin V. P. Melnik I. M. Khacevich O. V. Tretyak A. G. Shkavro |
| author_sort |
S. V. Bunak |
| title |
Electrical properties of semiconductor structures with Si nanoclusters in SiO2 grown by high temperature annealing technology of SiOX layer, X<2 |
| title_short |
Electrical properties of semiconductor structures with Si nanoclusters in SiO2 grown by high temperature annealing technology of SiOX layer, X<2 |
| title_full |
Electrical properties of semiconductor structures with Si nanoclusters in SiO2 grown by high temperature annealing technology of SiOX layer, X<2 |
| title_fullStr |
Electrical properties of semiconductor structures with Si nanoclusters in SiO2 grown by high temperature annealing technology of SiOX layer, X<2 |
| title_full_unstemmed |
Electrical properties of semiconductor structures with Si nanoclusters in SiO2 grown by high temperature annealing technology of SiOX layer, X<2 |
| title_sort |
electrical properties of semiconductor structures with si nanoclusters in sio2 grown by high temperature annealing technology of siox layer, x<2 |
| publishDate |
2010 |
| url |
http://jnas.nbuv.gov.ua/article/UJRN-0000349118 |
| work_keys_str_mv |
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| first_indexed |
2025-07-22T15:14:48Z |
| last_indexed |
2025-07-22T15:14:48Z |
| _version_ |
1838360977519673344 |