Determination of energy disorder value in amorphous oxide semiconductors
Saved in:
Date: | 2024 |
---|---|
Main Author: | I. I. Fishchuk |
Format: | Article |
Language: | English |
Published: |
2024
|
Series: | Nuclear physics and atomic energy |
Online Access: | http://jnas.nbuv.gov.ua/article/UJRN-0001472321 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Journal Title: | Library portal of National Academy of Sciences of Ukraine | LibNAS |
Institution
Library portal of National Academy of Sciences of Ukraine | LibNASSimilar Items
-
Charge carrier generation in photosensitive amorphous molecular semiconductors
by: Zabolotny, M.A.
Published: (2003) -
Growth of crystals with bent crystalline lattice in amorphous semiconductor films
by: Bagmut, A.G., et al.
Published: (2008) -
The origin of radiation resistance of oxides with cationic disorder
by: Gritsyna, V.T., et al.
Published: (2002) -
Peculiarities of the exciton scattering in double semiconductor quantum wells with disordered layers
by: G. V. Vertsimakha
Published: (2015) -
Peculiarities of the exciton scattering in double semiconductor quantum wells with disordered layers
by: Vertsimakha, G.V.
Published: (2015)