The effect of the barrier width between coupled double quantum wells of GaAs/InGaAs/GaAs on the bipolar transport and THz emission of the hot carriers in the lateral electric field

Saved in:
Bibliographic Details
Date:2020
Main Authors: M. N. Vinoslavskij, P. A. Beljovskij, V. N. Poroshin, V. V. Vajnberg, N. V. Bajdus
Format: Article
Language:English
Published: 2020
Series:Low Temperature Physics
Online Access:http://jnas.nbuv.gov.ua/article/UJRN-0001151503
Tags: Add Tag
No Tags, Be the first to tag this record!
Journal Title:Library portal of National Academy of Sciences of Ukraine | LibNAS

Institution

Library portal of National Academy of Sciences of Ukraine | LibNAS