Features of the formation of ohmic contacts to n+-InN

Features of the formation of ohmic contacts to n+-InN

Saved in:

Bibliographic Details
Date:	2019
Main Authors:	P. O. Sai, N. V. Safryuk-Romanenko, D. B. But, G. Cywiński, N. S. Boltovets, P. N. Brunkov, N. V. Jmeric, S. V. Ivanov, V. V. Shynkarenko
Format:	Article
Language:	English
Published:	2019
Series:	Ukrainian journal of physics
Online Access:	http://jnas.nbuv.gov.ua/article/UJRN-0000960518
Tags:	Add Tag No Tags, Be the first to tag this record!
Journal Title:	Library portal of National Academy of Sciences of Ukraine \| LibNAS

Institution

Library portal of National Academy of Sciences of Ukraine | LibNAS

Similar Items

Features of the formation of ohmic contacts to n+-InN
by: P. O. Sai, et al.
Published: (2019)

Особливості формування омічних контактів до n+-InN
by: Sai, P. O., et al.
Published: (2019)

Ohmic contacts to InN-based materials
by: P. O. Sai
Published: (2016)

Ohmic contacts to InN-based materials
by: Sai, P.O.
Published: (2016)

Formation of ohmic contacts to n(p)-gan and measurement of their contact resistivity
by: M. S. Boltovets, et al.
Published: (2010)

Formation of ohmic contacts to n(p)-gan and measurement of their contact resistivity
by: Boltovets, M.S., et al.
Published: (2010)

Current transport through ohmic contacts to indiume nitride with high defect density
by: Sai, P.O., et al.
Published: (2018)

On a feature of temperature dependence of contact resistivity for ohmic contacts to n-Si with an n+-n doping step
by: A. V. Sachenko, et al.
Published: (2014)

On a feature of temperature dependence of contact resistivity for ohmic contacts to n-Si with an n⁺ -n doping step
by: Sachenko, A.V., et al.
Published: (2014)

Structural and electrical-physical properties of the ohmic contacts based on palladium to n⁺ -n-n⁺⁺ -n⁺⁺⁺ -InP
by: Belyaev, A.E., et al.
Published: (2015)

Role of dislocations in formation of ohmic contacts to heavily doped n-Si
by: A. E. Belyaev, et al.
Published: (2013)

Role of dislocations in formation of ohmic contacts to heavily doped n-Si
by: Belyaev, A.E., et al.
Published: (2013)

Effect of microwave radiation on I V curves and contact resistivity of ohmic contacts to n-GaN and n-AlN
by: A. E. Belyaev, et al.
Published: (2013)

Effect of microwave radiation on I-V curves and contact resistivity of ohmic contacts to n-GaN and n-AlN
by: Belyaev, A.E., et al.
Published: (2013)

Structural and electrical-physical properties of the ohmic contacts based on palladium to n+-n-n++-n+++-InP
by: A. E. Belyaev, et al.
Published: (2015)

Temperature dependence of contact resistance of Au Ti Pd2Si n+-Si ohmic contacts
by: A. E. Belyaev, et al.
Published: (2010)

Temperature dependence of contact resistance of Au−Ti−Pd2Si−n⁺ -Si ohmic contacts
by: Belyaev, A.E., et al.
Published: (2010)

Mechanisms of contact resistance formation in ohmic contacts with high dislocation density (review)
by: A. V. Sachenko, et al.
Published: (2013)

Theoretical and experimental modelling the specific resistance of vertical ohmic contacts Au–Ti–Pd–n+-n-n+-Si in IMPATT diodes
by: P. M. Romanets, et al.
Published: (2016)

Theoretical and experimental modelling the specific resistance of vertical ohmic contacts Au–Ti–Pd–n⁺-n-n⁺-Si in IMPATT diodes
by: Romanets, P.M., et al.
Published: (2016)

Mechanism of current flow and temperature dependence of contact resistivity in Au-Pd-Ti-Pd-n+-GaN ohmic contacts
by: A. V. Sachenko, et al.
Published: (2013)

Mechanism of current flow and temperature dependence of contact resistivity in Au-Pd-Ti-Pd-n⁺ -GaN ohmic contacts
by: Sachenko, A.V., et al.
Published: (2013)

Method for data processing in application to ohmic contacts
by: A. E. Belyaev, et al.
Published: (2019)

Ohmic contacts to Hall sensors based on n-InSb-GaAs(i) heterostructures
by: Boltovets, N.S., et al.
Published: (2006)

Effect of microwave treatment on current flow mechanism ohmic contacts to GaN
by: V. N. Sheremet
Published: (2013)

Effect of microwave treatment on current flow mechanism in ohmic contacts to GaN
by: Sheremet, V.N.
Published: (2013)

Ohmic contacts based on Pd to indium phosphide Gunn diodes
by: Belyaev, A.E., et al.
Published: (2015)

Influence of gettering on aluminum ohmic contact formation
by: V. N. Litvinenko, et al.
Published: (2020)

The features of temperature dependence of contact resistivity of Au-Ti-Pd₂Si-p⁺ ₋Si ohmic contacts
by: Belyaev, A.E., et al.
Published: (2010)

Investigation of contact resistivity for Au—Ti—Pd—n-Si ohmic contacts for impatt diodes
by: V. V. Basanets, et al.
Published: (2015)

The features of temperature dependence of contact resistivity of Au Ti Pd2Si p+-Si ohmic contacts
by: A. E. Belyaev, et al.
Published: (2010)

Ohmic contacts based on Pd to indium phosphide Gunn diodes
by: A. E. Belyaev, et al.
Published: (2015)

Complex index of refraction of indium nitride InN
by: J. O. Akinlami, et al.
Published: (2012)

Complex index of refraction of indium nitride InN
by: Akinlami, J.O., et al.
Published: (2012)

Metrological aspects of studying the specific contact resistivity of ohmic contacts by using the four-contact method
by: V. N. Sheremet
Published: (2014)

Metrological aspects of researching the specific contact resistivity of ohmic contacts by using the four-contact method
by: Sheremet, V.N.
Published: (2014)

Heat-resistant ohmic and barrier contacts for GaAs-based microwave devices
by: Ivanov, V.N., et al.
Published: (2003)

Resistance formation mechanisms for contacts and to n-AlN and n-GaN with a high dislocation density
by: A. V. Sachenko, et al.
Published: (2012)

Investigation of resistance formation mechanisms for contacts to n-AlN and n-GaN with a high dislocation density
by: Sachenko, A.V., et al.
Published: (2012)

Physical mechanisms providing formation of ohmic contacts metal-semiconductor (Review)
by: A. V. Sachenko, et al.
Published: (2018)