Combination of thermionic emission and tunneling mechanisms to analyze the leakage current in 4H-SiC Schottky barrier diodes
Saved in:
Date: | 2019 |
---|---|
Main Author: | A. Latreche |
Format: | Article |
Language: | English |
Published: |
2019
|
Series: | Semiconductor Physics, Quantum Electronics and Optoelectronics |
Online Access: | http://jnas.nbuv.gov.ua/article/UJRN-0001000431 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Journal Title: | Library portal of National Academy of Sciences of Ukraine | LibNAS |
Institution
Library portal of National Academy of Sciences of Ukraine | LibNASSimilar Items
-
Conduction mechanisms of the reverse leakage current of β-Ga2O3 Schottky barrier diodes
by: A. Latreche
Published: (2019) -
SiC Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers
by: Boltovets, N.S., et al.
Published: (2004) -
Simulation of combined schottky diode
by: Кісельов, Єгор Миколайович
Published: (2015) -
Simulation of combined Schottky diode
by: Ye. M. Kiselov
Published: (2013) -
Simulation of combined schottky diode
by: Кісельов, Єгор Миколайович
Published: (2015)