Electrophysical characteristics of initial and irradiated GaAsP LEDs structures
Saved in:
Date: | 2019 |
---|---|
Main Authors: | O. V. Konoreva, P. H. Lytovchenko, O. I. Radkevych, V. M. Popov, V. P. Tartachnyk, V. V. Shlapatska |
Format: | Article |
Language: | English |
Published: |
2019
|
Series: | Nuclear physics and atomic energy |
Online Access: | http://jnas.nbuv.gov.ua/article/UJRN-0001018738 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Journal Title: | Library portal of National Academy of Sciences of Ukraine | LibNAS |
Institution
Library portal of National Academy of Sciences of Ukraine | LibNASSimilar Items
-
Spectral characteristics of initial and irradiated GaAsP LEDs
by: R. M. Vernydub, et al.
Published: (2021) -
Influence of radiation on the electrophysical parameters of GaAsP LEDs
by: R. M. Vernydub, et al.
Published: (2021) -
Electrophysical characteristics of GaAs1-xPx LEDs irradiated by 2 MeV electrons
by: R. M. Vernydub, et al.
Published: (2020) -
Influence of electron irradiation with E = 2 MeV on electrophysical and optical characteristics of green InGaN/GaN LEDs
by: T. I. Mosiuk, et al.
Published: (2023) -
Radiative recombination in initial and electron-irradiated GaP crystals
by: Hontaruk, O., et al.
Published: (2010)