Radiation-resistant photostructure for Schottky diode based on Cr/In2Hg3Te6
Saved in:
Date: | 2016 |
---|---|
Main Authors: | A. A. Ashcheulov, A. V. Galochkin, I. S. Romanjuk, S. G. Dremljuzhenko |
Format: | Article |
Language: | English |
Published: |
2016
|
Series: | Technology and design in electronic equipment |
Online Access: | http://jnas.nbuv.gov.ua/article/UJRN-0000546549 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Journal Title: | Library portal of National Academy of Sciences of Ukraine | LibNAS |
Institution
Library portal of National Academy of Sciences of Ukraine | LibNASSimilar Items
-
Active region of CdTe X-/γ-ray detector with Schottky diode
by: Kosyachenko, L.A., et al.
Published: (2005) -
Simulation of combined schottky diode
by: Кісельов, Єгор Миколайович
Published: (2015) -
Simulation of combined Schottky diode
by: Ye. M. Kiselov
Published: (2013) -
Simulation of combined schottky diode
by: Кісельов, Єгор Миколайович
Published: (2015) -
Investigation of the intermediate layers of a diode with a Schottky barrier Al-pCdTe-Mo
by: Sh. A. Mirsagatov, et al.
Published: (2012)