The influence of the exciton non-radiative recombination in silicon on the photoconversion efficiency. 1. The case of a long Shockley–Read–Hall lifetime
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| Дата: | 2016 |
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| Автори: | , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
2016
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| Назва видання: | Semiconductor Physics, Quantum Electronics and Optoelectronics |
| Онлайн доступ: | http://jnas.nbuv.gov.ua/article/UJRN-0000714435 |
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| Назва журналу: | Library portal of National Academy of Sciences of Ukraine | LibNAS |
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Library portal of National Academy of Sciences of Ukraine | LibNAS| id |
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open-sciencenbuvgovua-521572024-02-29T13:04:54Z The influence of the exciton non-radiative recombination in silicon on the photoconversion efficiency. 1. The case of a long Shockley–Read–Hall lifetime A. V. Sachenko V. P. Kostylyov V. M. Vlasiuk I. O. Sokolovskyi M. Evstigneev 1560-8034 2016 en Semiconductor Physics, Quantum Electronics and Optoelectronics http://jnas.nbuv.gov.ua/article/UJRN-0000714435 Article |
| institution |
Library portal of National Academy of Sciences of Ukraine | LibNAS |
| collection |
Open-Science |
| language |
English |
| series |
Semiconductor Physics, Quantum Electronics and Optoelectronics |
| spellingShingle |
Semiconductor Physics, Quantum Electronics and Optoelectronics A. V. Sachenko V. P. Kostylyov V. M. Vlasiuk I. O. Sokolovskyi M. Evstigneev The influence of the exciton non-radiative recombination in silicon on the photoconversion efficiency. 1. The case of a long Shockley–Read–Hall lifetime |
| format |
Article |
| author |
A. V. Sachenko V. P. Kostylyov V. M. Vlasiuk I. O. Sokolovskyi M. Evstigneev |
| author_facet |
A. V. Sachenko V. P. Kostylyov V. M. Vlasiuk I. O. Sokolovskyi M. Evstigneev |
| author_sort |
A. V. Sachenko |
| title |
The influence of the exciton non-radiative recombination in silicon on the photoconversion efficiency. 1. The case of a long Shockley–Read–Hall lifetime |
| title_short |
The influence of the exciton non-radiative recombination in silicon on the photoconversion efficiency. 1. The case of a long Shockley–Read–Hall lifetime |
| title_full |
The influence of the exciton non-radiative recombination in silicon on the photoconversion efficiency. 1. The case of a long Shockley–Read–Hall lifetime |
| title_fullStr |
The influence of the exciton non-radiative recombination in silicon on the photoconversion efficiency. 1. The case of a long Shockley–Read–Hall lifetime |
| title_full_unstemmed |
The influence of the exciton non-radiative recombination in silicon on the photoconversion efficiency. 1. The case of a long Shockley–Read–Hall lifetime |
| title_sort |
influence of the exciton non-radiative recombination in silicon on the photoconversion efficiency. 1. the case of a long shockley–read–hall lifetime |
| publishDate |
2016 |
| url |
http://jnas.nbuv.gov.ua/article/UJRN-0000714435 |
| work_keys_str_mv |
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| first_indexed |
2025-07-17T22:57:53Z |
| last_indexed |
2025-07-17T22:57:53Z |
| _version_ |
1837937110718349312 |