Magnetotenso- and tensomagnetoresistance of n-Ge

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Datum:2016
Hauptverfasser: P. I. Baranskyi, H. P. Haidar
Format: Artikel
Sprache:English
Veröffentlicht: 2016
Schriftenreihe:Optoelectronics and Semiconductor Technique
Online Zugang:http://jnas.nbuv.gov.ua/article/UJRN-0001007752
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Назва журналу:Library portal of National Academy of Sciences of Ukraine | LibNAS

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Library portal of National Academy of Sciences of Ukraine | LibNAS
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spelling open-sciencenbuvgovua-555652024-02-29T13:21:06Z Magnetotenso- and tensomagnetoresistance of n-Ge P. I. Baranskyi H. P. Haidar 2707-6806 2016 en Optoelectronics and Semiconductor Technique http://jnas.nbuv.gov.ua/article/UJRN-0001007752 Article
institution Library portal of National Academy of Sciences of Ukraine | LibNAS
collection Open-Science
language English
series Optoelectronics and Semiconductor Technique
spellingShingle Optoelectronics and Semiconductor Technique
P. I. Baranskyi
H. P. Haidar
Magnetotenso- and tensomagnetoresistance of n-Ge
format Article
author P. I. Baranskyi
H. P. Haidar
author_facet P. I. Baranskyi
H. P. Haidar
author_sort P. I. Baranskyi
title Magnetotenso- and tensomagnetoresistance of n-Ge
title_short Magnetotenso- and tensomagnetoresistance of n-Ge
title_full Magnetotenso- and tensomagnetoresistance of n-Ge
title_fullStr Magnetotenso- and tensomagnetoresistance of n-Ge
title_full_unstemmed Magnetotenso- and tensomagnetoresistance of n-Ge
title_sort magnetotenso- and tensomagnetoresistance of n-ge
publishDate 2016
url http://jnas.nbuv.gov.ua/article/UJRN-0001007752
work_keys_str_mv AT pibaranskyi magnetotensoandtensomagnetoresistanceofnge
AT hphaidar magnetotensoandtensomagnetoresistanceofnge
first_indexed 2025-07-18T00:08:17Z
last_indexed 2025-07-18T00:08:17Z
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