Magnetotenso- and tensomagnetoresistance of n-Ge
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Datum: | 2016 |
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Format: | Artikel |
Sprache: | English |
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2016
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Schriftenreihe: | Optoelectronics and Semiconductor Technique |
Online Zugang: | http://jnas.nbuv.gov.ua/article/UJRN-0001007752 |
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open-sciencenbuvgovua-555652024-02-29T13:21:06Z Magnetotenso- and tensomagnetoresistance of n-Ge P. I. Baranskyi H. P. Haidar 2707-6806 2016 en Optoelectronics and Semiconductor Technique http://jnas.nbuv.gov.ua/article/UJRN-0001007752 Article |
institution |
Library portal of National Academy of Sciences of Ukraine | LibNAS |
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Open-Science |
language |
English |
series |
Optoelectronics and Semiconductor Technique |
spellingShingle |
Optoelectronics and Semiconductor Technique P. I. Baranskyi H. P. Haidar Magnetotenso- and tensomagnetoresistance of n-Ge |
format |
Article |
author |
P. I. Baranskyi H. P. Haidar |
author_facet |
P. I. Baranskyi H. P. Haidar |
author_sort |
P. I. Baranskyi |
title |
Magnetotenso- and tensomagnetoresistance of n-Ge |
title_short |
Magnetotenso- and tensomagnetoresistance of n-Ge |
title_full |
Magnetotenso- and tensomagnetoresistance of n-Ge |
title_fullStr |
Magnetotenso- and tensomagnetoresistance of n-Ge |
title_full_unstemmed |
Magnetotenso- and tensomagnetoresistance of n-Ge |
title_sort |
magnetotenso- and tensomagnetoresistance of n-ge |
publishDate |
2016 |
url |
http://jnas.nbuv.gov.ua/article/UJRN-0001007752 |
work_keys_str_mv |
AT pibaranskyi magnetotensoandtensomagnetoresistanceofnge AT hphaidar magnetotensoandtensomagnetoresistanceofnge |
first_indexed |
2025-07-18T00:08:17Z |
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2025-07-18T00:08:17Z |
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1837941535655591936 |