Changes in electrophysical properties of heavily doped n-Ge <As> single crystals under the influence of thermoannealings
Збережено в:
| Дата: | 2015 |
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| Автор: | |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
2015
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| Назва видання: | Semiconductor Physics, Quantum Electronics and Optoelectronics |
| Онлайн доступ: | http://jnas.nbuv.gov.ua/article/UJRN-0000353233 |
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| Назва журналу: | Library portal of National Academy of Sciences of Ukraine | LibNAS |
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Library portal of National Academy of Sciences of Ukraine | LibNAS| id |
open-sciencenbuvgovua-57388 |
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open-sciencenbuvgovua-573882024-04-16T12:33:34Z Changes in electrophysical properties of heavily doped n-Ge <As> single crystals under the influence of thermoannealings G. P. Gaidar 1560-8034 2015 en Semiconductor Physics, Quantum Electronics and Optoelectronics http://jnas.nbuv.gov.ua/article/UJRN-0000353233 Article |
| institution |
Library portal of National Academy of Sciences of Ukraine | LibNAS |
| collection |
Open-Science |
| language |
English |
| series |
Semiconductor Physics, Quantum Electronics and Optoelectronics |
| spellingShingle |
Semiconductor Physics, Quantum Electronics and Optoelectronics G. P. Gaidar Changes in electrophysical properties of heavily doped n-Ge <As> single crystals under the influence of thermoannealings |
| format |
Article |
| author |
G. P. Gaidar |
| author_facet |
G. P. Gaidar |
| author_sort |
G. P. Gaidar |
| title |
Changes in electrophysical properties of heavily doped n-Ge <As> single crystals under the influence of thermoannealings |
| title_short |
Changes in electrophysical properties of heavily doped n-Ge <As> single crystals under the influence of thermoannealings |
| title_full |
Changes in electrophysical properties of heavily doped n-Ge <As> single crystals under the influence of thermoannealings |
| title_fullStr |
Changes in electrophysical properties of heavily doped n-Ge <As> single crystals under the influence of thermoannealings |
| title_full_unstemmed |
Changes in electrophysical properties of heavily doped n-Ge <As> single crystals under the influence of thermoannealings |
| title_sort |
changes in electrophysical properties of heavily doped n-ge <as> single crystals under the influence of thermoannealings |
| publishDate |
2015 |
| url |
http://jnas.nbuv.gov.ua/article/UJRN-0000353233 |
| work_keys_str_mv |
AT gpgaidar changesinelectrophysicalpropertiesofheavilydopedngeltasgtsinglecrystalsundertheinfluenceofthermoannealings |
| first_indexed |
2025-07-18T00:51:00Z |
| last_indexed |
2025-07-18T00:51:00Z |
| _version_ |
1837944256275152896 |