Features of the amplifying properties of a field-effect transistor in a circuit with dynamic load
Saved in:
Date: | 2015 |
---|---|
Main Authors: | A. V. Karimov, D. M. Jodgorova, B. M. Kamanov, D. R. Dzhuraev, A. A. Turaev |
Format: | Article |
Language: | English |
Published: |
2015
|
Series: | Physical surface engineering |
Online Access: | http://jnas.nbuv.gov.ua/article/UJRN-0001045129 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Journal Title: | Library portal of National Academy of Sciences of Ukraine | LibNAS |
Institution
Library portal of National Academy of Sciences of Ukraine | LibNASSimilar Items
-
Phototransistor composite on field effect transistors
by: A. V. Karimov, et al.
Published: (2012) -
Investigation of the saturation effect of the drain current of a field-effect transistor with series-connected channels
by: A. V. Karimov, et al.
Published: (2012) -
Functional characteristics of the field-effect transistor with control pn-junction with different switching modes
by: O. A. Abdulkhaev, et al.
Published: (2012) -
Analyzing the particularities of electronic circuits simulation in the software package Simulink using a transistor amplifier as an example
by: I. V. Melnyk
Published: (2016) -
Research of dependence of the target characteristics of the field transistor
by: D. M. Jodgorova
Published: (2005)