On a feature of temperature dependence of contact resistivity for ohmic contacts to n-Si with an n+-n doping step

On a feature of temperature dependence of contact resistivity for ohmic contacts to n-Si with an n+-n doping step

Gespeichert in:

Bibliographische Detailangaben
Datum:	2014
Hauptverfasser:	A. V. Sachenko, A. E. Belyaev, N. S. Boltovets, A. O. Vinogradov, V. A. Pilipenko, T. V. Petlitskaya, V. M. Anischik, R. V. Konakova, T. V. Korostinskaya, V. P. Kostylyov, Ya. Ya. Kudryk, V. G. Lyapin, P. N. Romanets, V. N. Sheremet
Format:	Artikel
Sprache:	English
Veröffentlicht:	2014
Schriftenreihe:	Semiconductor Physics, Quantum Electronics and Optoelectronics
Online Zugang:	http://jnas.nbuv.gov.ua/article/UJRN-0000352564
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!
Назва журналу:	Library portal of National Academy of Sciences of Ukraine \| LibNAS

Institution

Library portal of National Academy of Sciences of Ukraine | LibNAS

Ähnliche Einträge

On a feature of temperature dependence of contact resistivity for ohmic contacts to n-Si with an n⁺ -n doping step
von: Sachenko, A.V., et al.
Veröffentlicht: (2014)

Role of dislocations in formation of ohmic contacts to heavily doped n-Si
von: Belyaev, A.E., et al.
Veröffentlicht: (2013)

Role of dislocations in formation of ohmic contacts to heavily doped n-Si
von: A. E. Belyaev, et al.
Veröffentlicht: (2013)

Temperature dependence of contact resistance of Au Ti Pd2Si n+-Si ohmic contacts
von: A. E. Belyaev, et al.
Veröffentlicht: (2010)

Temperature dependence of contact resistance of Au−Ti−Pd2Si−n⁺ -Si ohmic contacts
von: Belyaev, A.E., et al.
Veröffentlicht: (2010)

Effect of microwave radiation on I-V curves and contact resistivity of ohmic contacts to n-GaN and n-AlN
von: Belyaev, A.E., et al.
Veröffentlicht: (2013)

Effect of microwave radiation on I V curves and contact resistivity of ohmic contacts to n-GaN and n-AlN
von: A. E. Belyaev, et al.
Veröffentlicht: (2013)

Formation of ohmic contacts to n(p)-gan and measurement of their contact resistivity
von: M. S. Boltovets, et al.
Veröffentlicht: (2010)

Formation of ohmic contacts to n(p)-gan and measurement of their contact resistivity
von: Boltovets, M.S., et al.
Veröffentlicht: (2010)

Structural and electrical-physical properties of the ohmic contacts based on palladium to n+-n-n++-n+++-InP
von: A. E. Belyaev, et al.
Veröffentlicht: (2015)

Theoretical and experimental modelling the specific resistance of vertical ohmic contacts Au–Ti–Pd–n⁺-n-n⁺-Si in IMPATT diodes
von: Romanets, P.M., et al.
Veröffentlicht: (2016)

Mechanism of current flow and temperature dependence of contact resistivity in Au-Pd-Ti-Pd-n+-GaN ohmic contacts
von: A. V. Sachenko, et al.
Veröffentlicht: (2013)

Structural and electrical-physical properties of the ohmic contacts based on palladium to n⁺ -n-n⁺⁺ -n⁺⁺⁺ -InP
von: Belyaev, A.E., et al.
Veröffentlicht: (2015)

Mechanisms of contact resistance formation in ohmic contacts with high dislocation density (review)
von: A. V. Sachenko, et al.
Veröffentlicht: (2013)

Theoretical and experimental modelling the specific resistance of vertical ohmic contacts Au–Ti–Pd–n+-n-n+-Si in IMPATT diodes
von: P. M. Romanets, et al.
Veröffentlicht: (2016)

Features of the formation of ohmic contacts to n+-InN
von: P. O. Sai, et al.
Veröffentlicht: (2019)

Features of the formation of ohmic contacts to n+-InN
von: P. O. Sai, et al.
Veröffentlicht: (2019)

Mechanism of current flow and temperature dependence of contact resistivity in Au-Pd-Ti-Pd-n⁺ -GaN ohmic contacts
von: Sachenko, A.V., et al.
Veröffentlicht: (2013)

Ohmic contacts to Hall sensors based on n-InSb-GaAs(i) heterostructures
von: Boltovets, N.S., et al.
Veröffentlicht: (2006)

Method for data processing in application to ohmic contacts
von: A. E. Belyaev, et al.
Veröffentlicht: (2019)

Ohmic contacts based on Pd to indium phosphide Gunn diodes
von: A. E. Belyaev, et al.
Veröffentlicht: (2015)

The features of temperature dependence of contact resistivity of Au-Ti-Pd₂Si-p⁺ ₋Si ohmic contacts
von: Belyaev, A.E., et al.
Veröffentlicht: (2010)

Effect of microwave treatment on current flow mechanism in ohmic contacts to GaN
von: Sheremet, V.N.
Veröffentlicht: (2013)

Effect of microwave treatment on current flow mechanism ohmic contacts to GaN
von: V. N. Sheremet
Veröffentlicht: (2013)

The features of temperature dependence of contact resistivity of Au Ti Pd2Si p+-Si ohmic contacts
von: A. E. Belyaev, et al.
Veröffentlicht: (2010)

Physical mechanisms providing formation of ohmic contacts metal-semiconductor (Review)
von: A. V. Sachenko, et al.
Veröffentlicht: (2018)

Ohmic contacts based on Pd to indium phosphide Gunn diodes
von: Belyaev, A.E., et al.
Veröffentlicht: (2015)

Metrological aspects of researching the specific contact resistivity of ohmic contacts by using the four-contact method
von: Sheremet, V.N.
Veröffentlicht: (2014)

Metrological aspects of studying the specific contact resistivity of ohmic contacts by using the four-contact method
von: V. N. Sheremet
Veröffentlicht: (2014)

Resistance formation mechanisms for contacts and to n-AlN and n-GaN with a high dislocation density
von: A. V. Sachenko, et al.
Veröffentlicht: (2012)

Heat-resistant barrier and ohmic contacts based on TiBx and ZrBx interstitial phases to microwave diode structures
von: Belyaev, A.E., et al.
Veröffentlicht: (2008)

Peculiarities of study of Au–Ti–Pd–n+-n-n+-Si multilayer contact structure to avalanche transit-time diodes
von: P. M. Romanets, et al.
Veröffentlicht: (2019)

Investigation of resistance formation mechanisms for contacts to n-AlN and n-GaN with a high dislocation density
von: Sachenko, A.V., et al.
Veröffentlicht: (2012)

Ohmic contacts to InN-based materials
von: Sai, P.O.
Veröffentlicht: (2016)

Ohmic contacts to InN-based materials
von: P. O. Sai
Veröffentlicht: (2016)

Investigation of contact resistivity for Au—Ti—Pd—n-Si ohmic contacts for impatt diodes
von: V. V. Basanets, et al.
Veröffentlicht: (2015)

Methods for creation and properties of ohmic contacts to indium phosphide (rewiev)
von: Ya. Ya. Kudryk
Veröffentlicht: (2015)

Influence of parameters inherent to ohmic contacts on properties of microwave avalanche transit-time diodes
von: Ya. Ya. Kudryk, et al.
Veröffentlicht: (2019)

Schottky-barrier Au–TiBx–n-GaN contacts
von: Ya. Kudryk
Veröffentlicht: (2015)

Heat-resistant ohmic and barrier contacts for GaAs-based microwave devices
von: Ivanov, V.N., et al.
Veröffentlicht: (2003)