Surface stresses at the initial steps of the GexSi1-x/Si(001) surface oxidation

Surface stresses at the initial steps of the GexSi1-x/Si(001) surface oxidation

Saved in:

Bibliographic Details
Date:	2014
Main Authors:	O. A. Hrynchuk, I. P. Koval, M. H. Nakhodkyn
Format:	Article
Language:	English
Published:	2014
Series:	Ukrainian Journal of Physics
Online Access:	http://jnas.nbuv.gov.ua/article/UJRN-0000726138
Tags:	Add Tag No Tags, Be the first to tag this record!
Journal Title:	Library portal of National Academy of Sciences of Ukraine \| LibNAS

Institution

Library portal of National Academy of Sciences of Ukraine | LibNAS

Similar Items

Surface stresses at the initial steps of the GexSi1-x/Si(001) surface oxidation
by: A. A. Grynchuk, et al.
Published: (2014)

Поверхневi напруження на початкових етапах окислення GexSi1−x/Si(001)
by: Grynchuk, A. A., et al.
Published: (2018)

Дифузія атома кисню у приповерхневі шари інтерфейсу GexSi1-x/Si(001)
by: Afanasieva, T.V., et al.
Published: (2022)

Adsorption of molecular oxygen onto Si1-xGex/Si(001) surface
by: O. A. Hrynchuk, et al.
Published: (2012)

Adsorption of molecular oxygen onto Si1-xGex/Si(001) surface
by: A. A. Greenchuk, et al.
Published: (2012)

Engineering of mixed Bi₄(GexSi₁₋x)₃O₁₂ scintillation crystals
by: Galenin, E., et al.
Published: (2015)

Адсорбція молекулярного кисню на по-верхню Si1–xGex/Si(001)
by: Greenchuk, A.A., et al.
Published: (2012)

Microstructure of the relaxed (001) Si surface
by: Kiv, A.E., et al.
Published: (2000)

Local atomic structures in Si₁₋xGex and Si₁₋xSnx random solid solutions
by: Deibuk, V.G., et al.
Published: (2005)

High-temperature configurations of dimers in Si (001) surface layers
by: Kiv, A.E., et al.
Published: (2003)

Study of the interaction of atoms of the IV- and V-th groups with Si(001) and Ge(001) surfaces
by: T. V. Afanasieva
Published: (2015)

Study of the interaction of atoms of the IV- and V-th groups with Si(001) and Ge(001) surfaces
by: T. V. Afanasieva
Published: (2015)

Phase diagrams of Si1-xGex solid solution: a theoretical approach
by: A. R. Jivani, et al.
Published: (2012)

Surface and electron structure of the 6H-SiC(0001)-(3×3) surface and ultrathin Ag films on Si(111) and Si(001)
by: Gasparov, V.A.
Published: (2011)

Interaction of molecular oxygen with Si(001) surface covered with a chromium or titanium monolayer
by: I. P. Koval, et al.
Published: (2015)

Interaction of molecular oxygen with Si(001) surface covered with a chromium or titanium monolayer
by: I. P. Koval, et al.
Published: (2015)

Surface and electron structure of the 6H-SiC(0001)-(3Ч3) surface and ultrathin Ag films on Si(111) and Si(001)
by: V. A. Gasparov
Published: (2011)

Phase diagrams of Si₁-xGex solid solution: a theoretical approach
by: Jivani, A.R., et al.
Published: (2012)

Investigation of the optical and acoustical phonon modes in Si₁₋xGex QD SLs
by: Dzhagan, V.N., et al.
Published: (2003)

Особливості зародження та упорядкування GeSi наноострівців у багатошарових структурах, сформованих на Si та Si1-xGex буферних шарах
by: Yukhymchuk, V.O., et al.
Published: (2022)

Нанокристаллы Si1–xGex в роли чувствительных элементов сенсора магнитного поля и температуры
by: Дружинин, А.А., et al.
Published: (2012)

Структура чистих Si−Si, Ge−Ge та змішаних аддимерів Si−Ge на поверхні Si(001)
by: Afanasieva, T.V., et al.
Published: (2022)

Оптоэлектронные свойства в гидрогенизированных тонких пленках a-Si1−xGex:H (x = 0−1), полученных плазмохимическим осаждением
by: Najafov, B. A., et al.
Published: (2018)

Scanning tunneling microscopy investigation of the Si(001)-c(8 Ч 8) nanostructured surface
by: A. Goriachko, et al.
Published: (2015)

Scanning tunneling microscopy investigation of the Si(001)-c(8 Ч 8) nanostructured surface
by: A. Goriachko, et al.
Published: (2015)

Piezoelectric effect in p -Si/SiGe/(001)Si modulation doped heterostructures
by: Dugaev, V.K., et al.
Published: (2000)

Энергетические характеристики примеси бора в гетероструктурах Si/Si1-xGex при селективном легировании в центре и на краю квантовых ям
by: Вайнберг, В.В., et al.
Published: (2007)

Some physical properties of Si₁₋xGex solid solutions using pseudo-alloy atom model
by: Jivani, A.R., et al.
Published: (2005)

Optoelectronic properties of thin hydrogenated a-Si1–xGex:H (x = 0ч1) films produced by plasma chemical deposition technique
by: B. A. Najafov, et al.
Published: (2014)

Optoelectronic properties of thin hydrogenated a-Si1–xGex:H (x = 0ч1) films produced by plasma chemical deposition technique
by: B. A. Nadzhafov, et al.
Published: (2014)

Topography of Si epitaxial monolayers obtained on Si (001) substrate by computer simulations
by: Pyziak, L., et al.
Published: (2003)

Structure of the dimeric adsorption complex Ge on the face of Si(001)
by: O. I. Tkachuk, et al.
Published: (2013)

Influence of the surface roughness and oxide surface layer onto Si optical constants measured by the ellipsometry technique
by: Rozouvan, T.S., et al.
Published: (2015)

Influence of the surface roughness and oxide surface layer onto Si optical constants measured by the ellipsometry technique
by: T. S. Rozouvan, et al.
Published: (2015)

Структура димерних адсорбційних комплексів Ge на грані Si(001)
by: Ткачук, О.І., et al.
Published: (2013)

Morphology and optical constants of ge nanocrystalline films deposited on Si(001)
by: Yu. M. Kozyriev, et al.
Published: (2016)

Transformation of addimers >Ge=Ge<, >Ge=Si< AND >Si=Si< on the relaxed side of Si (001) (4 Ч 2)
by: M. I. Terebinska, et al.
Published: (2021)

Formation of β-SiC on por-Si/mono-Si surface according to Stranski - Krastanow mechanism
by: Y. O. Suchikova, et al.
Published: (2022)

Complex destruction of near-surface silicon layers of Si-SiO₂ structure
by: Yatsunskiy, I.R., et al.
Published: (2010)

Morphology and optical properties of tetragonal Ge nanoclusters grown on chemically oxidized Si(100) surfaces
by: V. S. Lysenko, et al.
Published: (2012)