Вплив домiшок з глибокими рiвнями на тензоелектричнi властивостi монокристалiчного кремнiю
The piezoresistance effect has been investigated in compensated and thermally treated samples of Si : Zn and Si : Zn, Mn under a uniaxial elastic compression. This effect is shown to be caused by changes in the concentration and mobility of current carriers. The anomalous change in the carrier mobil...
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| Date: | 2018 |
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| Main Authors: | , , , |
| Format: | Article |
| Language: | English |
| Published: |
Publishing house "Academperiodika"
2018
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| Subjects: | |
| Online Access: | https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2018609 |
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| Journal Title: | Ukrainian Journal of Physics |
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Ukrainian Journal of Physics| Summary: | The piezoresistance effect has been investigated in compensated and thermally treated samples of Si : Zn and Si : Zn, Mn under a uniaxial elastic compression. This effect is shown to be caused by changes in the concentration and mobility of current carriers. The anomalous change in the carrier mobility under the compression along crystallographic axis [111] is connected with a change in their scattering on large-scale defect formations. |
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