Термолюмiнесценцiя квантових точок кремнiю в моделi двi пастки–один центр рекомбiнацiї
A model of the first and general order kinetics describing the thermoluminescence (TL) from silicon quantum dots consisting of two active electron trap levels and one recombination center is proposed. The two trap levels are located at different trap depths beneath the edge of the conduction band. T...
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| Datum: | 2018 |
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| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Publishing house "Academperiodika"
2018
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| Schlagworte: | |
| Online Zugang: | https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2018714 |
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| Назва журналу: | Ukrainian Journal of Physics |