Раманівське дослідження індукованих лазерним випромінюванням перетворень у термічно напилених тонких плівках TlInSe2
TlInSe2 films with thickness from 10 to 200 nm were thermally evaporated on silicon and silicate glass substrates. Micro-Raman spectra measured at a moderate excitation (532 nm, 4 kW/cm2) confirm the amorphous character of the films. Narrow features revealed in the spectra at an excitation power den...
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| Date: | 2024 |
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| Main Authors: | , , , , , , |
| Format: | Article |
| Language: | English |
| Published: |
Publishing house "Academperiodika"
2024
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| Subjects: | |
| Online Access: | https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2023243 |
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| Journal Title: | Ukrainian Journal of Physics |
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Ukrainian Journal of Physics| Summary: | TlInSe2 films with thickness from 10 to 200 nm were thermally evaporated on silicon and silicate glass substrates. Micro-Raman spectra measured at a moderate excitation (532 nm, 4 kW/cm2) confirm the amorphous character of the films. Narrow features revealed in the spectra at an excitation power density of 40 kW/cm2 show the evidence for the formation of TlInSe2 , TlSe, and In2Se3 crystallites in the laser spot. For thin (10–30 nm) films, the rod-shaped TlInSe2 crystallites are shown to be oriented within the film plane. The crystallite formation is governed by the thermal effect of the tightly focused laser beam. |
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