Analysis of the near-band-edge luminescence of semiconductors containing isolated and bound shallow acceptors and donors

за авторством Glinchuk, K.D., Prokhorovich, A.V.
Опубліковано 2002

Analysis of the near-band-edge luminescence of semiconductors containing isolated and bound shallow acceptors and donors

за авторством Glinchuk, K.D., Prokhorovich, A.V.
Опубліковано 2002

About influences of different actions on spectra of impurity photoluminescence in GaAs

за авторством Litovchenko, N.M., Prokhorovich, A.V., Strilchuk, O.N.
Опубліковано 2001

Stimulated by heating-up changes of lux-brightness characteristics of semi-in sulating speciallyundoped GaAs crystals

за авторством Litovchenko, N.M., Prokhorovich, A.V., Strilchuk, O.N.
Опубліковано 2001

Analysis of luminescence method for determination of Cd₁₋xZnxTe composition

за авторством Glinchuk, K.D., Litovchenko, N.M., Prokhorovich, A.V., Strilchuk, O.N.
Опубліковано 2005