Features of tensoresistance in single crystals of germanium and silicon with different dopants

by Baranskii, P.I., Gaidar, G.P.
Published 2016

Peculiarities of thermoannealing in n-Si and n-Ge crystals with oxygen impurity

by Baranskii, P.I., Gaidar, G.P.
Published 2012

Development of the physical insight into the nature of the factors that control electrophysical and other properties of semiconductors

by Baranskii, P.I., Babich, V.M., Venger, E.F.
Published 2001

The features of magnetoresistance of n-Si doped with phosphorus from the melt and by nuclear transmutation

by Baranskii, P.I., Babich, V.M., Venger, E.F., Dotsenko, Yu.P.
Published 2000

Mass-spectrometric investigations of gas evolution

by Asnis, Yu.A., Baranskii, P.I., Babich, V.M., Zabolotin, S.P., Ptushinskii, Yu.G., Sukretnyi, V.G.
Published 2006