Features of tensoresistance in single crystals of germanium and silicon with different dopants

von Baranskii, P.I., Gaidar, G.P.
Veröffentlicht 2016

Peculiarities of thermoannealing in n-Si and n-Ge crystals with oxygen impurity

von Baranskii, P.I., Gaidar, G.P.
Veröffentlicht 2012

Development of the physical insight into the nature of the factors that control electrophysical and other properties of semiconductors

von Baranskii, P.I., Babich, V.M., Venger, E.F.
Veröffentlicht 2001

The features of magnetoresistance of n-Si doped with phosphorus from the melt and by nuclear transmutation

von Baranskii, P.I., Babich, V.M., Venger, E.F., Dotsenko, Yu.P.
Veröffentlicht 2000

Mass-spectrometric investigations of gas evolution

von Asnis, Yu.A., Baranskii, P.I., Babich, V.M., Zabolotin, S.P., Ptushinskii, Yu.G., Sukretnyi, V.G.
Veröffentlicht 2006