The annealing of high - level doped materials on the base of the n – and p – Si₀.₇ Ge₀.₃ solid solution under reactor irradiation

by Dolgolenko, A.P.
Published 2006

The kinetic of point defect transformation during the annealing process in electron-irradiated silicon

by Gaidar, G.P., Dolgolenko, A.P., Litovchenko, P.G.
Published 2011

The radiation hardness of pulled silicon doped with germanium

by Dolgolenko, A.P., Gaidar, G.P., Varentsov, M.D., Litovchenko, P.G.
Published 2007

Dependence of the defect introduction rate on the dose of irradiation of p-Si by fast-pile neutrons

by Dolgolenko, A.P., Varentsov, M.D., Gaidar, G.P., Litovchenko, P.G.
Published 2007

Influence of growing and doping methods on radiation hardness of n-Si irradiated by fast-pile neutrons

by Dolgolenko, A.P., Litovchenko, P.G., Litovchenko, A.P., Varentsov, M.D., Lastovetsky, V.F., Gaidar, G.P.
Published 2004

Peculiarities of charge carriers transport in submicron Si-Ge whiskers

by Druzhinin, A.A., Dolgolenko, A.P., Ostrovskii, I.P., Khoverko, Yu.N., Nichkalo, S.I., Kogut, Iu.R.
Published 2014

Seebeck’s effect in p-SiGe whisker samples

by Dolgolenko, A.P., Druzhinin, A.A., Karpenko, A.Ya., Nichkalo, S.I., Ostrovsky, I.P., Litovchenko, P.G., Litovchenko, A.P.
Published 2011

Influence of preliminary irradiation on radiation hardness of silicon and indium antimonide

by Litovchenko, P.G., Wahl, W., Groza, A.A., Dolgolenko, A.P., Karpenko, A.Ya., Khivrych, V.I., Litovchenko, O.P., Lastovetsky, V.F., Sugakov1, V.I., Dubovy, V.K.
Published 2001