New evidence of the hopping nature of the excess tunnel current in heavily doped silicon p-n diodes at cryogenic temperatures

за авторством V. L. Borblik, Yu. M. Shwarts, M. M. Shwarts, A. B. Aleinikov
Опубліковано 2017

Negative magnetoresistance of heavily doped silicon p-n junction

за авторством V. L. Borblik, I. A. Rudnev, Yu. M. Shwarts, M. M. Shwarts
Опубліковано 2011

Smoothing cubic spline approximation of silicon diode temperature sensors thermometric characteristics

за авторством O. M. Ivashchenko, Yu. M. Shwarts, M. M. Shwarts, D. P. Kopko, N. I. Sypko
Опубліковано 2010

Effect of magnetic field on hysteretic characteristics of silicon diodes under conditions of low-temperature impurity breakdown

за авторством A. B. Aleinikov, V. A. Berezovets, V. L. Borblik, M. M. Shwarts, Yu. M. Shwarts
Опубліковано 2012

Optimized calibration of cryogenic silicon thermodiodes

за авторством O. M. Ivashchenko, Yu. M. Shwarts, M. M. Shwarts, D. P. Kopko, M. I. Sypko
Опубліковано 2011

Nanocrystalline Ge films created by thermal vacuum deposition on GaAs substrates: structural and electric properties

за авторством V. L. Borblik, A. A. Korchevoi, A. S. Nikolenko, V. V. Strelchuk, A. M. Fonkich, Yu. M. Shwarts, M. M. Shwarts
Опубліковано 2014