Effect of Gas environment on electrophysical parameters of heterojunctions on the basis of schottky barrier with nano-structured (95% In2O3 + 5% SnO2) oxide films

von V. V. Ilchenko, O. M. Kostiukevych, V. V. Lendiel, V. I. Radko, N. S. Holoborodko
Veröffentlicht 2016

Optical and electrophysical properties of 95% In2O3 + 5% SnO2/ns-Si heterostructure

von V. A. Vynychenko, V. V. Buchenko, N. S. Holoborodko, V. V. Lendel, Ye. Lushkin, V. M. Teleha
Veröffentlicht 2016