An analytical accumulation mode SOI pMOSFET model for high-temperature analog applications

von Houk, Yu., Iniguez, B., Flandre, D., Nazarov, A.
Veröffentlicht 2006

SIMS study of deuterium distribution and thermal stability in ZMR SOI structures

von Boutry-Forveille, A., Ballutaud, D., Nazarov, A.N.
Veröffentlicht 1998

Hydrogen plasma treatment of silicon thin-film structures and nanostructured layers

von Nazarov, A.N., Lysenko, V.S., Nazarova, T.M.
Veröffentlicht 2008

The charge trapping/emission processes in silicon nanocrystalline nonvolatile memory assisted by electric field and elevated temperatures

von Ievtukh, V.A., Ulyanov, V.V., Nazarov, A.N.
Veröffentlicht 2016

Influence of traps in gate oxide-Si film transition layers on FD MOSFET's characteristics at cryogenic emperatures

von Lysenko, V.S., Tyagulsky, I.P., Osiyuk, I.N., Nazarov, A.N.
Veröffentlicht 2007

Characterization of charge trapping processes in fully-depleted UNIBOND SOI MOSFET subjected to γ-irradiation

von Houk, Y., Nazarov, A.N., Turchanikov, V.I., Lysenko, V.S., Andriaensen, S., Flandre, D.
Veröffentlicht 2006

Revision of interface coupling in ultra-thin body silicon-on-insulator MOSFETs

von Rudenko, T., Nazarov, A., Kilchytska, V., Flandre, D., Popov, V., Ilnitsky, M., Lysenko, V.
Veröffentlicht 2013

Atomic Structure in the Vicinity of Nanovoids and Features of These Defects

von Germanov, A.B., Ershova, I.V., Kislitskaya, E.V., Nazarov, A.V., Zaluzhnyi, A.G.
Veröffentlicht 2013

Emission characteristics and potential of macroparticle in beam-plasma discharge

von Bizyukov, A.A., Romaschenko, E.V., Sereda, K.N., Chibisov, A.D., Nazarov, A.V.
Veröffentlicht 2008

Hall ion source with ballistic and magnetic beam focusing

von Bizyukov, A.A., Girka, A.I., Sereda, K.N., Nazarov, A.V., Romaschenko, E.V.
Veröffentlicht 2008

Photoluminescent properties of oxidized stochiometric and carbon-rich amorphous Si₁₋xCx:H films

von Vasin, A.V., Ishikawa, Y., Rusavsky, A.V., Nazarov, A.N., Konchitz, A.A., Lysenko, V.S.
Veröffentlicht 2015

Modeling of grain subdivision during severe plastic deformation by VPSC method combined with disclination analysis

von Nazarov, A.A., Enikeev, N.A., Romanov, A.E., Orlova, T.S., Alexandrov, I.V., Beyerlei, n I.J.
Veröffentlicht 2005

Enhancement of CdSSe QD exciton luminescence efficiency by hydrogen RF plasma treatment

von Kunets, V.P., Kulish, N.R., Strelchuk, V.V., Nazarov, A.N., Tkachenko, A.S., Lysenko, V.S., Lisitsa, M.P.
Veröffentlicht 2003

High-temperature characteristics of zone-melting recrystallized silicon-on-insulator MOSFETs

von Lysenko, V.S., Rudenko, T.E., Nazarov, A.N., Kilchitskaya, V.I., Rudenko, A.N., Limanov, A.B., Colinge, J.-P.
Veröffentlicht 1998

Effect of chemical and radiofrequency plasma treatment on photoluminescence of SiOx films

von Indutnyy, I.Z., Lysenko, V.S., Min'ko, V.I., Nazarov, A.N., Tkachenko, A.S., Shepeliavyi, P.E., Dan'ko, V.A., Maidanchuk, I.Yu.
Veröffentlicht 2006

Novel hysteresis effect in ultrathin epitaxial Gd₂O₃ high-k dielectric

von Nazarov, A.N., Gomeniuk, Y.V., Gomeniuk, Y.Y., Lysenko, V.S., Gottlob, H.D.B., Schmidt, M., Lemme, M.C., Czernohorsky, M., Ostenc, H.J.
Veröffentlicht 2008

Direct synthesized graphene-like film on SiO₂: Mechanical and optical properties

von Bortchagovsky, E.G., Vasin, A.V., Lytvyn, P.M., Tiagulskyi, S.I., Slobodian, A.M., Verovsky, I.N., Strelchuk, V.V., Stubrov, Yu., Nazarov, A.N.
Veröffentlicht 2016

Modification of electroluminescence and charge trapping in germanium implanted metal-oxide-silicon light-emitting diodes with plasma treatment

von Nazarov, A.N., Skorupa, W., Vovk, Ja.N., Osiyuk, I.N., Tkachenko, A.S., Tyagulskii, I.P., Lysenko, V.S., Gebel, T., Rebohle, L., Yankov, R.A., Nazarova, T.M.
Veröffentlicht 2005

Erratum: Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions

von Nazarov, A.N., Osiyuk, I.N., Tiagulskyi, S.I., Lysenko, V.S., Tyagulskyy, I.P., Torbin, V.N., Omelchuk, V.V., Nazarova, T.M., Rebohle, L., Skorupa, W.
Veröffentlicht 2009

Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions

von Nazarov, A.N., Osiyuk, I.N., Tiagulskyi, S.I., Lysenko, V.S., Tyagulskyy, I.P., Torbin, V.N., Omelchuk, V.V., Nazarova, T.N., Rebohle, L., Skorupa, W.
Veröffentlicht 2008