Effect of the charge state of traps on the transport current in the SiC/Si heterostructure

by Lysenko, V.S., Tyagulski, I.P., Gomeniuk, Y.V., Osiyuk, I.N.
Published 2000

Influence of traps in gate oxide-Si film transition layers on FD MOSFET's characteristics at cryogenic emperatures

by Lysenko, V.S., Tyagulsky, I.P., Osiyuk, I.N., Nazarov, A.N.
Published 2007

Effect of oxide-semiconductor interface traps on low-temperature operation of MOSFETs

by Lysenko, V.S., Tyagulski, I.P., Gomeniuk, Y.V., Osiyuk, I.N.
Published 2001

Properties of SiGe/Si heterostructures fabricated by ion implantation technique

by Gomeniuk, Y.V., Lysenko, V.S., Osiyuk, I.N., Tyagulski, I.P., Valakh, M.Ya., Yukhimchuk, V.A., Willander, M., Patel, C.J.
Published 1999

Modification of electroluminescence and charge trapping in germanium implanted metal-oxide-silicon light-emitting diodes with plasma treatment

by Nazarov, A.N., Skorupa, W., Vovk, Ja.N., Osiyuk, I.N., Tkachenko, A.S., Tyagulskii, I.P., Lysenko, V.S., Gebel, T., Rebohle, L., Yankov, R.A., Nazarova, T.M.
Published 2005

Erratum: Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions

by Nazarov, A.N., Osiyuk, I.N., Tiagulskyi, S.I., Lysenko, V.S., Tyagulskyy, I.P., Torbin, V.N., Omelchuk, V.V., Nazarova, T.M., Rebohle, L., Skorupa, W.
Published 2009

Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions

by Nazarov, A.N., Osiyuk, I.N., Tiagulskyi, S.I., Lysenko, V.S., Tyagulskyy, I.P., Torbin, V.N., Omelchuk, V.V., Nazarova, T.N., Rebohle, L., Skorupa, W.
Published 2008