Formation of ohmic contacts to n(p)-gan and measurement of their contact resistivity

von Boltovets, M.S., Ivanov, V.M., Konakova, R.V., Kudryk, Ya.Ya., Milenin, V.V., Shynkarenko, V.V., Sheremet, V.M., Sveshnikov, Yu.N., Yavich, B.S.
Veröffentlicht 2010

On the current flow mechanism in the Au-TiBx-n-GaN-i-Al₂O₃ Schottky barrier diodes

von Belyaev, A.E., Boltovets, N.S., Ivanov, V.N., Klad’ko, V.P., Konakova, R.V., Kudryk, Ya.Ya., Kuchuk, A.V., Milenin, V.V., Sveshnikov, Yu.N., Sheremet, V.N.
Veröffentlicht 2007

Development of high-stable contact systems to gallium nitride microwave diodes

von Belyaev, A.E., Boltovets, N.S., Ivanov, V.N., Kapitanchuk, L.M., Kladko, V.P., Konakova, R.V., Kudryk, Ya.Ya., Kuchuk, A.V., Lytvyn, O.S., Milenin, V.V., Sheremet, V.N., Sveshnikov, Yu.N.
Veröffentlicht 2007