Features of electrochemical processes at the boundary p-GaAs-HF water solution

von G. A. Pashchenko, Yu. Kravetskyi, L. I. Trishchuk
Veröffentlicht 2018

Modeling the process of removal aimed at cut traces on semiconductor wafers by using the method of contactless chemical-and-dynamical polishing

von G. A. Pashchenko, Yu. Kravetskyi, A. V. Fomin
Veröffentlicht 2015

Model of smoothing roughness on GaAs wafer surface by using nonabrasive chemical-and-mechanical polishing

von A. V. Fomin, G. A. Pashchenko, Yu. Kravetskyi, I. G. Lutsyshyn
Veröffentlicht 2017

Electrical properties of In/p-pbte structures

von H. P. Malanych, A. V. Sukach, V. V. Tetorkin, A. T. Voroshchenko, Yu. Kravetskyi, I. I. Pavlovych
Veröffentlicht 2012

Reverse current-voltage characteristics and carrier transport mechanisms in InAs photodi-odes

von A. V. Sukach, V. V. Tetorkin, A. T. Voroshchenko, Yu. Kravetskyi, V. I. Lukianenko, I. H. Lutsyshyn
Veröffentlicht 2011

Carrier transport mechanisms in polycrystalline sandwich structures p+-PbTe/p-CdTe/p+-PbTe

von A. V. Sukach, V. V. Tetorkin, A. I. Tkachuk, A. T. Voroshchenko, Yu. Kravetskyi, I. H. Lutsyshyn
Veröffentlicht 2013

Peculiarities of preparation of CdTe p-n junctions and carrier transport in them

von A. T. Voroshchenko, A. V. Sukach, V. V. Tetorkin, A. I. Tkachuk, Yu. Kravetskyi, I. H. Lutsyshyn, I. M. Matiiuk
Veröffentlicht 2017

Peculiarities of manufacture, electrical and photoelectrical properties of diffusion Gep-i-n- photodiodes

von V. P. Maslov, A. V. Sukach, V. V. Tetorkin, Yu. Kravetskyi, N. V. Kachur, Ye. F. Venher, A. T. Voroshchenko, I. H. Lutsyshyn, I. M. Matiiuk, A. V. Fedorenko
Veröffentlicht 2018