Ion sources optimization for high energy ion implantation by computer simulation

Ion sources optimization for high energy ion implantation by computer simulation

Results of the computer simulation for ion sources optimization used for ion implantations have been done. The highly stripped ion source has been designed to provide high current beams of multiply charged P and B ions for high energy ion implantation. However, the total current transport efficiency...

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Datum:	2008
Hauptverfasser:	Litovko, I.V., Gushenets, V.I.
Format:	Artikel
Sprache:	English
Veröffentlicht:	Національний науковий центр «Харківський фізико-технічний інститут» НАН України 2008
Schriftenreihe:	Вопросы атомной науки и техники
Schlagworte:	Plasma electronics
Online Zugang:	http://dspace.nbuv.gov.ua/handle/123456789/110769
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!
Назва журналу:	Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:	Ion sources optimization for high energy ion implantation by computer simulation / I.V. Litovko, V.I. Gushenets // Вопросы атомной науки и техники. — 2008. — № 6. — С. 138-140. — Бібліогр.: 3 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine

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