Photosensitive porous silicon based structures
We present results of electrical and photoelectrical measurements on two types of Al/porous silicon (PS)/monocrystalline silicon (c-Si)/Al sandwich structures with thin and thick PS layers obtained by stain etching. Current-voltage characteristics and photosensitivity spectra indicate that for struc...
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| Datum: | 1998 |
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| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
1998
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/114664 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Photosensitive porous silicon based structures / S.V. Svechnikov, E.B. Kaganovich, E.G. Manoilov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1998. — Т. 1, № 1. — С. 13-17. — Бібліогр.: 32 назв. — англ. |