Strong effect of magnetic field on the edge luminescence line width in diluted magnetic narrow-gap Hg₁₋xMnxTe
Peculiarities of photoluminescence in narrow-gap Hg₁₋xMnxTe (0.09 < x < 0.11) under variation of both magnetic field and temperature are studied. A strong resonance enhancement of the edge emission and a narrowing of the line width to less than 2.5 meV were detected. The photoluminescence beha...
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| Datum: | 1998 |
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| 1. Verfasser: | |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
1998
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/114666 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Strong effect of magnetic field on the edge luminescence line width in diluted magnetic narrow-gap Hg₁₋xMnxTe / Yu.I. Mazur // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1998. — Т. 1, № 1. — С. 33-40. — Бібліогр.: 24 назв. — англ. |