Electrophysical сharacteristics of LEDs based on GaN epitaxial films
Forward and reverse current-voltage (I-V) characteristics of light emitting diodes based on GaN epitaxial films were investigated by differential spectroscopy. This technique is based on calculating the differential slope of the I-V curve in the log-log scale in the following form: α = d lg i/d lg V...
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| Datum: | 1998 |
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| Hauptverfasser: | , , , , , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
1998
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/114679 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Electrophysical сharacteristics of LEDs based on GaN epitaxial films / P.Ph. Oleksenko, G.A. Sukach, P.S. Smertenko, S.I. Vlaskina, A.B. Bogoslovskaya, I.O. Spichak, D.H. Shin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1998. — Т. 1, № 1. — С. 112-115. — Бібліогр.: 12 назв. — англ. |