The radiation hardness of pulled silicon doped with germanium
The radiation hardness of Czochralski grown n-type silicon samples doped with germanium (NGe = 2×10²⁰ cm⁻³) and without it was investigated after irradiation by fast neutrons. The dependence of the effective carrier concentration on fluence was described in the framework of Gossick’s corrected model...
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| Datum: | 2007 |
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| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2007
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/117657 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | The radiation hardness of pulled silicon doped with germanium / A.P. Dolgolenko, G.P. Gaidar, M.D. Varentsov, P.G. Litovchenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 1. — С. 4-12. — Бібліогр.: 32 назв. — англ. |