Calculation of electron mobility and effect of dislocation scattering in GaN
The electron mobility of GaN has been obtained at various temperatures by the relaxation time approximation method. The effect of dislocation scattering has also been discussed and calculated alongwith other important scattering mechanisms in this material. The results agree with other available...
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| Date: | 2007 |
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| Main Authors: | , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2007
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| Series: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Access: | http://dspace.nbuv.gov.ua/handle/123456789/117661 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Calculation of electron mobility and effect of dislocation scattering in GaN / J. Kundu, C.K. Sarkar, P.S. Mallick // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 1. — С. 1-3. — Бібліогр.: 8 назв. — англ. |