Injection current and infrared photosensitivity in isotype p-PbTe/p-CdTe heterojunctions
Iso-type p-PbTe/p-CdTe heterojunctions were grown on BaF2 substrates by using the hot-wall epitaxy technique. The growth details are presented. The carrier transport mechanism was investigated by means of the current-voltage measurements. At 77 K the dominant conduction mechanism was found to b...
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Date: | 2013 |
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Main Authors: | , , , |
Format: | Article |
Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2013
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Series: | Semiconductor Physics Quantum Electronics & Optoelectronics |
Online Access: | http://dspace.nbuv.gov.ua/handle/123456789/117663 |
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Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
Cite this: | Injection current and infrared photosensitivity in isotype p-PbTe/p-CdTe heterojunctions / V.V. Tetyorkin, A.V. Sukach, A.I. Tkachuk, S.P. Movchan // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 1. — С. 59-63. — Бібліогр.: 22 назв. — англ. |