Optimization of conditions for treatment of ZnSe crystal surfaces by chemical etching
The process of chemical polishing the undoped and doped ZnSe crystals surface with H₂O₂ – HBr etchants has been studied. The dependence of the samples polishing rate on the concentration of H₂O₂ in HBr solution has been investigated. Surface states after chemical etching have been established usi...
Gespeichert in:
| Datum: | 2013 |
|---|---|
| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2013
|
| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/117683 |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Optimization of conditions for treatment of ZnSe crystal surfaces by chemical etching / V.М. Tomashyk, А.S. Kravtsova, Z.F. Tomashyk, І.B. Stratiychuk, S.М. Galkin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 2. — С. 140-145. — Бібліогр.: 15 назв. — англ. |