Silicon carbide defects and luminescence centers in current heated 6H-SiC
At room temperature yellow photoluminescence with a broad peak of 2.13 eV is a well-known feature of boron-doped 6H-SiC. Usually yellow luminescence is regarded as recombination involving both the boron-related deep acceptor and donor level. But the nature of the deep level has not been clearly u...
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| Date: | 2010 |
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| Main Authors: | , , , , , , , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2010
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| Series: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Access: | http://dspace.nbuv.gov.ua/handle/123456789/117702 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Silicon carbide defects and luminescence centers in current heated 6H-SiC / S.W. Lee, S.I. Vlaskina, V.I. Vlaskin, I.V. Zaharchenko, V.A. Gubanov, G.N. Mishinova, G.S. Svechnikov, V.E. Rodionov, and S.A. Podlasov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 1. — С. 24-29. — Бібліогр.: 23 назв. — англ. |