Electrical properties of MIS structures with silicon nanoclusters
The theoretical and experimental investigations of electrical properties of the Al-SiO₂-( − ncsSi -SiO₂-Si structures grown using high temperature annealing SiOx, x < 2, have been carried out. It has been experimentally found that the Al-SiO₂-( − ncsSi )-SiO₂-Si structures with the tunnel dielec...
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| Дата: | 2011 |
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| Автори: | , , , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2011
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/117722 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Electrical properties of MIS structures with silicon nanoclusters / S.V. Bunak, V.V. Ilchenko, V.P. Melnik, I.M. Hatsevych, B.N. Romanyuk, A.G. Shkavro, O.V. Tretyak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 2. — С. 241-246. — Бібліогр.: 10 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-117722 |
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irk-123456789-1177222017-05-27T03:04:02Z Electrical properties of MIS structures with silicon nanoclusters Bunak, S.V. Ilchenko, V.V. Melnik, V.P. Hatsevych, I.M. Romanyuk, B.N. Shkavro, A.G. Tretyak, O.V. The theoretical and experimental investigations of electrical properties of the Al-SiO₂-( − ncsSi -SiO₂-Si structures grown using high temperature annealing SiOx, x < 2, have been carried out. It has been experimentally found that the Al-SiO₂-( − ncsSi )-SiO₂-Si structures with the tunnel dielectric layer revealed the effect of dynamic memory. Electric properties and parameters of the interface states located between − ncsSi and SiO₂ were studied in detail by measuring of current-voltage, capacitance-voltage, and thermally stimulated current characteristics. 2011 Article Electrical properties of MIS structures with silicon nanoclusters / S.V. Bunak, V.V. Ilchenko, V.P. Melnik, I.M. Hatsevych, B.N. Romanyuk, A.G. Shkavro, O.V. Tretyak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 2. — С. 241-246. — Бібліогр.: 10 назв. — англ. 1560-8034 PACS 72.20.Ee, 73.40.Qv http://dspace.nbuv.gov.ua/handle/123456789/117722 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
The theoretical and experimental investigations of electrical properties of the
Al-SiO₂-( − ncsSi -SiO₂-Si structures grown using high temperature annealing SiOx, x < 2, have been carried out. It has been experimentally found that the Al-SiO₂-( − ncsSi )-SiO₂-Si structures with the tunnel dielectric layer revealed the effect of dynamic memory. Electric properties and parameters of the interface states located between − ncsSi and SiO₂ were studied in detail by measuring of current-voltage, capacitance-voltage, and thermally stimulated current characteristics. |
| format |
Article |
| author |
Bunak, S.V. Ilchenko, V.V. Melnik, V.P. Hatsevych, I.M. Romanyuk, B.N. Shkavro, A.G. Tretyak, O.V. |
| spellingShingle |
Bunak, S.V. Ilchenko, V.V. Melnik, V.P. Hatsevych, I.M. Romanyuk, B.N. Shkavro, A.G. Tretyak, O.V. Electrical properties of MIS structures with silicon nanoclusters Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Bunak, S.V. Ilchenko, V.V. Melnik, V.P. Hatsevych, I.M. Romanyuk, B.N. Shkavro, A.G. Tretyak, O.V. |
| author_sort |
Bunak, S.V. |
| title |
Electrical properties of MIS structures with silicon nanoclusters |
| title_short |
Electrical properties of MIS structures with silicon nanoclusters |
| title_full |
Electrical properties of MIS structures with silicon nanoclusters |
| title_fullStr |
Electrical properties of MIS structures with silicon nanoclusters |
| title_full_unstemmed |
Electrical properties of MIS structures with silicon nanoclusters |
| title_sort |
electrical properties of mis structures with silicon nanoclusters |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2011 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/117722 |
| citation_txt |
Electrical properties of MIS structures with silicon nanoclusters / S.V. Bunak, V.V. Ilchenko, V.P. Melnik, I.M. Hatsevych, B.N. Romanyuk, A.G. Shkavro, O.V. Tretyak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 2. — С. 241-246. — Бібліогр.: 10 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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2025-07-08T12:41:18Z |
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2025-07-08T12:41:18Z |
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