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1

Формування нанорозмiрних фаз при акусто-стимульованому iонно-променевому синтезi

by Litovchenko, V. G., Melnik, V. P., Romanjuk, B. M.
Published 2019

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2

Механiзми модифiкацiї профiлiв розподiлу домiшок при мас-спектрометричному аналiзi багатошарових наноструктур...

by Efremov, A. A., Litovchenko, V. G., Melnik, V. P., Oberemok, O. S., Popov, V. G., Romanyuk, B. M.
Published 2019

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3

Activation of porous Si blue emission due to preanodization ion implantation

by Rozhin, A.G., Klyui, N.I., Litovchenko, V.G., Melnik, V.P., Romanyuk, B.N., Piryatinskii, Yu.P.
Published 2001

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4

Electrical properties of MIS structures with silicon nanoclusters

by Bunak, S.V., Ilchenko, V.V., Melnik, V.P., Hatsevych, I.M., Romanyuk, B.N., Shkavro, A.G., Tretyak, O.V.
Published 2011

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5

Formation of silicon nanoclusters in buried ultra-thin oxide layers

by Oberemok, O.S., Litovchenko, V.G., Gamov, D.V., Popov, V.G., Melnik, V.P., Gudymenko, O.Yo., Nikirin, V.A., Khatsevich, І.M.
Published 2011

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6

Strain relaxation in thin Si₁-ₓ-yGeₓCy layers on Si substrates

by Valakh, M.Ya., Gamov, D.V., Dzhagan, V.M., Lytvyn, O.S., Melnik, V.P., Romanjuk, B.M., Popov, V.G., Yukhymchuk, V.O.
Published 2006

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7

Electrical properties of semiconductor structures with Si nanoclusters in SiO₂ grown by high temperature annealing technology of SiOx layer, X<2

by Bunak, S.V., Buyanin, A.A., Ilchenko, V.V., Marin, V.V., Melnik, V.P., Khacevich, I.M., Tretyak, O.V., Shkavro, A.G.
Published 2010

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8

Термохромні властивості плівок оксиду ванадію, отриманих магнетронним напиленням

by Melnik, V.P., Khatsevych, I.M., Goltvyanskyi, Yu.V., Nikirin, V.A., Romanyuk, B.M., Popov, V.G., Klad'ko, V.P., Kuchuk, A.V.
Published 2022

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9

Дослiдження рекомбiнацiйних характеристик Cz-кремнiю, iмплантованого iонами залiза

by Gamov, D. V., Gudymenko, O. I., Kladko, V. P., Litovchenko, V. G., Melnik, V. P., Oberemok, O. S., Popov, V. G., Polishchuk, Yu. O., Romaniuk, B. M., Chernenko, V. V., Nasekа, V. M.
Published 2018

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