Polarization conversion effect in obliquely deposited SiOx films
Structural anisotropy of the SiOx films and nc-Si-SiOx light emitting nanostructures, prepared by oblique deposition of silicon monoxide in vacuum, has been studied using the polarization conversion (PC) effect. For this purpose, a simple method of PC investigation with usage of a standard null-ell...
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| Datum: | 2011 |
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| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2011
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/117749 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Polarization conversion effect in obliquely deposited SiOx films / M.V. Sopinskyy, I.Z. Indutnyi, K.V. Michailovska, P.E. Shepeliavy, V.M. Tkach // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 3. — С. 273-278. — Бібліогр.: 21 назв. — англ. |