Laser oscillation in Cr²⁺:ZnS waveguide thin-film structures under electrical pumping with impact excitation mechanism

Laser oscillation in Cr²⁺:ZnS waveguide thin-film structures under electrical pumping with impact excitation mechanism

The laser oscillation at room temperature in Cr²⁺:ZnS waveguide thin-film structures under electrical pumping with the impact excitation mechanism was first discovered after improvement of some waveguide optical properties. However, lasing turned out to be unstable and ceases soon, which is accom...

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Дата:2011
Автори: Vlasenko, N.A., Oleksenko, P.F., Mukhlyo, M.O., Lytvyn, P.M., Veligura, L.I., Denisova, Z.L.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2011
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/117755
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Laser oscillation in Cr²⁺:ZnS waveguide thin-film structures under electrical pumping with impact excitation mechanism / N.A. Vlasenko, P.F. Oleksenko, M.O. Mukhlyo, P.M. Lytvyn, L.I. Veligura, Z.L. Denisova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 3. — С. 339-343. — Бібліогр.: 16 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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spelling irk-123456789-1177552017-05-27T03:05:15Z Laser oscillation in Cr²⁺:ZnS waveguide thin-film structures under electrical pumping with impact excitation mechanism Vlasenko, N.A. Oleksenko, P.F. Mukhlyo, M.O. Lytvyn, P.M. Veligura, L.I. Denisova, Z.L. The laser oscillation at room temperature in Cr²⁺:ZnS waveguide thin-film structures under electrical pumping with the impact excitation mechanism was first discovered after improvement of some waveguide optical properties. However, lasing turned out to be unstable and ceases soon, which is accompanied by strong weakening the emission recorded from the waveguide edge whereas the emission from the structure face remains intensive. It is shown that the above changes stem from increasing optical losses caused by appearance of light scattering in the structure by inhomogeneities formed during lasing as a consequence the most probably of recrystallization processes in the Cr:ZnS film. Some ways are proposed to improve the lasing stability 2011 Article Laser oscillation in Cr²⁺:ZnS waveguide thin-film structures under electrical pumping with impact excitation mechanism / N.A. Vlasenko, P.F. Oleksenko, M.O. Mukhlyo, P.M. Lytvyn, L.I. Veligura, Z.L. Denisova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 3. — С. 339-343. — Бібліогр.: 16 назв. — англ. 1560-8034 PACS 42.55.-f, 42.79.Gn, 68.55.Ln, 78.60.Fi http://dspace.nbuv.gov.ua/handle/123456789/117755 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description The laser oscillation at room temperature in Cr²⁺:ZnS waveguide thin-film structures under electrical pumping with the impact excitation mechanism was first discovered after improvement of some waveguide optical properties. However, lasing turned out to be unstable and ceases soon, which is accompanied by strong weakening the emission recorded from the waveguide edge whereas the emission from the structure face remains intensive. It is shown that the above changes stem from increasing optical losses caused by appearance of light scattering in the structure by inhomogeneities formed during lasing as a consequence the most probably of recrystallization processes in the Cr:ZnS film. Some ways are proposed to improve the lasing stability
format Article
author Vlasenko, N.A.
Oleksenko, P.F.
Mukhlyo, M.O.
Lytvyn, P.M.
Veligura, L.I.
Denisova, Z.L.
spellingShingle Vlasenko, N.A.
Oleksenko, P.F.
Mukhlyo, M.O.
Lytvyn, P.M.
Veligura, L.I.
Denisova, Z.L.
Laser oscillation in Cr²⁺:ZnS waveguide thin-film structures under electrical pumping with impact excitation mechanism
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Vlasenko, N.A.
Oleksenko, P.F.
Mukhlyo, M.O.
Lytvyn, P.M.
Veligura, L.I.
Denisova, Z.L.
author_sort Vlasenko, N.A.
title Laser oscillation in Cr²⁺:ZnS waveguide thin-film structures under electrical pumping with impact excitation mechanism
title_short Laser oscillation in Cr²⁺:ZnS waveguide thin-film structures under electrical pumping with impact excitation mechanism
title_full Laser oscillation in Cr²⁺:ZnS waveguide thin-film structures under electrical pumping with impact excitation mechanism
title_fullStr Laser oscillation in Cr²⁺:ZnS waveguide thin-film structures under electrical pumping with impact excitation mechanism
title_full_unstemmed Laser oscillation in Cr²⁺:ZnS waveguide thin-film structures under electrical pumping with impact excitation mechanism
title_sort laser oscillation in cr²⁺:zns waveguide thin-film structures under electrical pumping with impact excitation mechanism
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2011
url http://dspace.nbuv.gov.ua/handle/123456789/117755
citation_txt Laser oscillation in Cr²⁺:ZnS waveguide thin-film structures under electrical pumping with impact excitation mechanism / N.A. Vlasenko, P.F. Oleksenko, M.O. Mukhlyo, P.M. Lytvyn, L.I. Veligura, Z.L. Denisova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 3. — С. 339-343. — Бібліогр.: 16 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
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first_indexed 2025-07-08T12:44:58Z
last_indexed 2025-07-08T12:44:58Z
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