Polarization analysis of birefringence in uniaxially deformed silicon crystals
The birefringence induced by uniaxial compression in low-doped silicon crystals was investigated both theoretically and experimentally. The circular components of the Stokes vector in the transmission and reflectance radiation are measured as a function of external pressure by using the method ba...
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| Datum: | 2007 |
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| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2007
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| Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/117773 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Polarization analysis of birefringence in uniaxially deformed silicon crystals / L.I. Berezhinsky, I.L. Berezhinsky, V.I. Pipa, I.Ye. Matyash, B.K. Serdega // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 1. — С. 49-54. — Бібліогр.: 12 назв. — англ. |