The formation mechanism of modified thin-film structures based on Ge-Se(S) systems and its influence on physical properties
The mechanisms of formation of modified thin-film structures based on GeSe(S) systems with different Al, Bi, Pb, Te, In modifiers evaporated in vacuum have been determined. The process of their growth and the structure is greatly influenced by the vapor composition, energetic state of its particl...
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| Date: | 2007 |
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| Main Authors: | , , , , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2007
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| Series: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Access: | http://dspace.nbuv.gov.ua/handle/123456789/117775 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | The formation mechanism of modified thin-film structures based on Ge-Se(S) systems and its influence on physical properties / G.T. Horvat, O.S. Kondratenko, V.Ju. Loja, I.M. Myholynets, I.J. Rosola, N.V. Jurkovуch // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 1. — С. 45-48. — Бібліогр.: 6 назв. — англ. |