Seebeck’s effect in p-SiGe whisker samples
p-SiGe whisker samples with a diameter of ~40 μm, grown by chemical precipitation from the vapor phase, have been investigated. Temperature dependences of the thermal e.m.f. and conductivity within the temperature interval 20…400 K have been measured. It has been shown that the mobility of holes...
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| Date: | 2011 |
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| Main Authors: | , , , , , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2011
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| Series: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Access: | http://dspace.nbuv.gov.ua/handle/123456789/117783 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Seebeck’s effect in p-SiGe whisker samples / A.P. Dolgolenko, A.A. Druzhinin, A.Ya. Karpenko, S.I. Nichkalo, I.P. Ostrovsky, P.G. Litovchenko, A.P. Litovchenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 4. — С. 456-460 — Бібліогр.: 6 назв. — англ. |