Light absorption by d-dimensional organic semiconductors under exciton transitions between broad bands

Within the framework of the dipole approximation the line-shape of light absorption for exciton transitions between broad bands in one-, two- and three-dimensional organic semiconductor structures are calculated. Exciton damping due to lattice imperfections is accounted for as a frequency independen...

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Datum:1999
1. Verfasser: Grigorchuk, N. I.
Format: Artikel
Sprache:English
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 1999
Schriftenreihe:Semiconductor Physics Quantum Electronics & Optoelectronics
Online Zugang:http://dspace.nbuv.gov.ua/handle/123456789/117858
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Light absorption by d-dimensional organic semiconductors under exciton transitions between broad bands / N. I. Grigorchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 25-30. — Бібліогр.: 21 назв. — англ.

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