IR sensor readout devices with source input circuits
Silicon readout devices with input direct injection and buffered direct injection circuits and charge-coupled devices (CCD) multiplexers to be used with n⁺-p- or p⁺-n-photovoltaic (PV) multielement arrays were designed, manufactured and tested in T = 77…300 K temperature region. The on-chip testing...
Saved in:
| Date: | 1999 |
|---|---|
| Main Authors: | , , , , , , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
1999
|
| Series: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Access: | http://dspace.nbuv.gov.ua/handle/123456789/117929 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | IR sensor readout devices with source input circuits / F.F. Sizov, V.P. Reva, Yu.P. Derkach, Yu.G. Kononenko, A.G. Golenkov, S.V. Korinets, S.D. Darchuk, D.A. Filenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 102-110. — Бібліогр.: 17 назв. — англ. |