Structure perfection variations of Si crystals grown by Czochralski or floating zone methods after implantation of oxygen or neon atoms followed by annealing
Structure perfection of the silicon crystals grown by the Czochralski and floating zone methods after implantation with oxygen or neon fast iones followed by annealing at the temperatures T ~ 1050-1150 ⁰0C, when large SiOx precipitates were formed, was studied by means of various X-ray diffraction m...
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| Date: | 1999 |
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| Main Authors: | , , , , , , , , , , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
1999
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| Series: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Access: | http://dspace.nbuv.gov.ua/handle/123456789/117934 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Structure perfection variations of Si crystals grown by Czochralski or floating zone methods after implantation of oxygen or neon atoms followed by annealing / L.I. Datsenko, J. Auleytner, A. Misiuk, V.P. Klad'ko, V.F. Machulin, J. Bak-Misiuk, D. Zymierska, I.V. Antonova, V.M. Melnyk, V.P. Popov, T. Czosnyka, J. Choinski // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 56-61. — Бібліогр.: 9 назв. — англ. |