Investigation of structural perfection of SiC ingots grown by a sublimation method
Monocrystalline SiC ingots were grown by a modified Lely method using 6H-SiC seed crystals with (0001) base plane. The crystal growth was carried out in the temperature range 2200-2500 ⁰C at Ar pressure from 2 to 40 mbar. The rate of growth varied between 0.3 and 1.5 mm/hour in the C-axis direction....
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Datum: | 1999 |
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Hauptverfasser: | , , , |
Format: | Artikel |
Sprache: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
1999
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Schriftenreihe: | Semiconductor Physics Quantum Electronics & Optoelectronics |
Online Zugang: | http://dspace.nbuv.gov.ua/handle/123456789/117937 |
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Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
Zitieren: | Investigation of structural perfection of SiC ingots grown by a sublimation method / S.F. Avramenko, V.S. Kiselev, M.Ya. Valakh, V.G. Visotski // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 76-79. — Бібліогр.: 11 назв. — англ. |